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Fabrication of micro-lens array obtained by anisotropic wet etching of silicon

机译:通过硅的各向异性湿蚀刻获得的微透镜阵列的制造

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This paper presents the fabrication of a micro-lens array surface with a single-mask process and two etching steps with KOH water solution. Numerical analysis of optics was used to determine the optimal design parameters such as curvature sagitta and radius. The dimension of each lens is 20μm × 20μm. We used anisotropic etching of <100> silicon through a circular and squar mask to produce a pyramidal pit formed by four (111) planes. The oxide mask is stripped and the immersion of the sample in the etchant solution favors the etching of (411) plane transforming the pit into a smooth hemispherical cavity. An intermediate stage exists when a wider 19.47~0 <411> - face pyramid replaces the initial 54.74~0 inverted pyramid. The dependence of surface roughness on concentration and temperature of KOH is investigated in the range of 25%-40% and 60°C-80°C, respectively, and compared between them. The surface profiles and roughness was characterized by AFM. The etching depth and radius of micro-lens array was obtained from the SEM images and AFM data. Also, the array of concave depressions was directly used as a mould for replication of KER-2500 transparent polymeric silicon from Shin-Etsu with a refractive index n=1.41. The perfectly matched array of micro-lenses can be detached from substrate and used as a local solar concentrator. Optical properties such as the focal length of the plano-convex micro-lens array, obtained by replication, are measured and analyzed.
机译:本文介绍了通过单掩模工艺和KOH水溶液的两个蚀刻步骤制造微透镜阵列表面的方法。使用光学数值分析来确定最佳设计参数,例如曲率弧度和半径。每个透镜的尺寸为20μm×20μm。我们通过圆形和方形掩模对<100>硅进行各向异性蚀刻,以产生由四个(111)平面形成的金字塔形凹坑。剥去氧化物掩模,将样品浸入蚀刻剂溶液中有利于蚀刻(411)平面,从而将凹坑转变成光滑的半球形空腔。当较宽的19.47〜0 <411>-面金字塔替换初始的54.74〜0倒金字塔时,存在一个中间阶段。研究了表面粗糙度对KOH浓度和温度的依赖性,分别在25%-40%和60°C-80°C的范围内进行了比较。通过AFM表征表面轮廓和粗糙度。从SEM图像和AFM数据获得微透镜阵列的蚀刻深度和半径。而且,凹入的凹坑的阵列直接用作复制来自信越的KER-2500透明聚合物硅的模具,其折射率n = 1.41。完美匹配的微透镜阵列可以与基板分离,并用作本地太阳能集中器。测量和分析通过复制获得的光学特性,例如平凸微透镜阵列的焦距。

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