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A Ka-band BiCMOS LC-VCO with wide tuning range and low phase noise using switched coupled inductors

机译:使用开关耦合电感器的Ka波段BiCMOS LC-VCO具有宽调谐范围和低相位噪声

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This paper presents a wideband and low phase noise millimeter-wave (mm-wave) voltage-controlled oscillator (VCO) fabricated in 130 nm BiCMOS technology. The output signal can sweep from 29.6 to 35.5 GHz, which corresponds to 18.1% tuning range. The LC-tank of the VCO consists of two coupled inductors and a binary weighted varactor bank. The secondary inductor is terminated with a switch realized with heterojunction bipolar transistor (HBT). Depending on the switch state, the effective inductance of the LC-core can be changed which leads to significant improvement of tuning range. It is shown that the resistance of the switch in ON state can have a small effect on the LC-tank quality factor Q if the switch is properly sized. This results in a good phase noise performance over the whole frequency range. The measured phase noise at 1 MHz offset from the carrier is better than -97 dBc/Hz, which results in a figure-of-merit of -180 dBc/Hz. The VCO dissipates 20 mW and occupies 0.1mm2 chip area.
机译:本文介绍了采用130 nm BiCMOS技术制造的宽带和低相位噪声毫米波(mm-wave)压控振荡器(VCO)。输出信号可以从29.6 GHz扫描到35.5 GHz,对应于18.1%的调谐范围。 VCO的LC储罐由两个耦合电感和一个二进制加权变容二极管组组成。次级电感器的端接开关由异质结双极晶体管(HBT)实现。根据开关状态,可以更改LC磁芯的有效电感,从而显着提高调谐范围。结果表明,如果开关尺寸合适,则处于导通状态的开关的电阻对LC储罐品质因数Q的影响很小。这样可在整个频率范围内提供良好的相位噪声性能。在偏离载波1 MHz处测得的相位噪声优于-97 dBc / Hz,因此品质因数为-180 dBc / Hz。 VCO耗散20 mW,并占用0.1mm2的芯片面积。

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