Evaluation of commercial SOI driver performances while operated in extreme conditions (150°C-200°C)

摘要

This paper presents the experimental characterization of commercial SOI MOSFET drivers from room temperature to 200°C and beyond. Parameters such as current amplitude, delay time, rise time and fall time of the output waveforms of the drivers are monitored. The test results will be discussed, and will help produce the specifications of an integrated SOI-based driver with the necessary functionality to drive an inverter up to 220°C ambient temperature.