A high voltage narrow pulse generator in nanometre CMOS process

摘要

A high voltage narrow pulse generating circuit (HNPG) in 90nm CMOS process is introduced which can produce a narrow pulse with amplitude of twice the level of the power supply and can be used to turn on a NMOS transistor completely in a short time in the low power supply environment of 90nm CMOS process. The circuit, which is applied for a patent with the application number 201510243084.6 [1], solves the problem that under the low power level of the nano-metre CMOS process chips, a NMOS transistor can't be turned on completely. The sampling rate of the tracking and holding circuit which employ the HNPG is improved from 700Msps to 1.25Gsps and other performances are also enhanced, with only a little punishment of chip area and power consumption.