Novel graphene field effect transistor with BNTM ferroelectric gate

摘要

A novel graphene field effect transistor based on BNTM ferroelectric gate dielectric is demonstrated. In this device, the few-layer graphene was fabricated by micromechanical exfoliation method, and transferred to the BNTM ferroelectric layer thin film which was used as the gate dielectric. The transport properties and the output properties of the graphene device are investigated in detail. These special properties of the GFET may be useful for some potential applications, such as non-volatile memories, phototransistors and so on.