Analysis of power losses in power MOSFET based stacked polyphase bridges converters

摘要

The ability to accurately predict power semiconductor losses is essential for converter design and can provide a reference for thermal management. Based on a stacked polyphase bridges converter, a simplified but accurate loss model is used in this paper to calculate the power losses of power MOSFETs and experimentally verified. A special focus of the analysis is the ringing loss calculation since it is inevitable in the switching process of power MOSFETs. In addition, this paper presents a comparison of power losses between Si MOSFET and GaN FET based converters by using the analytical model.