首页> 外文会议>IEEE International Power Electronics and Motion Control Conference >Low frequency oscillation in voltage controlled H-bridge inverter with memristive load: Simulations and experiments
【24h】

Low frequency oscillation in voltage controlled H-bridge inverter with memristive load: Simulations and experiments

机译:忆阻负载的压控H桥逆变器的低频振荡:仿真和实验

获取原文

摘要

In recent years, memristor has been emerging as a hot research. Many electrical devices have been found to possess the features of memristor. Therefore, to supply power source to memristive devices will be a meaningful work. This paper investigates a voltage controlled H-bridge inverter with memristive load. PSIM simulations show that low frequency oscillation will occur if the circuit parameters are not appropriate, and its oscillation frequency will be lower than the line frequency. Finally, experimental results are presented to verify the simulations and theoretical analysis.
机译:近年来,忆阻器已成为热门研究。已经发现许多电子设备具有忆阻器的特征。因此,向忆阻器件供电将是一项有意义的工作。本文研究了具有忆阻负载的压控H桥逆变器。 PSIM仿真显示,如果电路参数不合适,则会发生低频振荡,并且其振荡频率将低于线路频率。最后,给出实验结果以验证仿真和理论分析。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号