Driving, Monitoring and Protection Technology for SiC Devices Using Intelligent Gate Drive: An Overview

摘要

This paper overviews the intelligent gate drive for silicon carbide (SiC) devices. Beyond the traditional isolation and amplification functionalities, the focus of this paper is the advanced driving, monitoring, and protection technology enabled by intelligent gate drive to enhance the SiC performance at the device level and converter level. Future research needs are also discussed.