CMOS RF class-E power amplifier with power control

摘要

This paper proposes a 2.2 GHz CMOS Power Amplifier (PA) useful to S-Band applications with an effective 3-bit output power control for efficiency improvement. It uses an input transformer to reduce ground bounce effects and operates around 1 W of output power. A tuned driver stage provides impedance matching to the input signal source and proper gain to the next stage. A control stage is used for efficiency improvement, composed by four parallel branches where the state (on or off) of 3 branches is separately activated by a 3-bit input. The classE power stage uses a cascode topology to minimize the voltage stress over the power transistors, allowing higher supply voltages. The PA was designed in a 130 nm RF process and post-layout simulations resulted a peak output power of 28.5 dBm with a maximum power added efficiency (PAE) around 47% under 3.3 V of supply voltage. The 3-bit control allows a total output power dynamic range adjustment of 12.4 dB, divided in 8 steps, with the PAE changing from 13.4% to 47.3%.