An X Band 40 W High Power Amplifier Based on Internally Matched

摘要

An X band high power amplifier which is based on internally matched single chip 5 mm GaN on SiC high electron mobility transistors (HEMTs) is successful simulated and tested. LCL network and microstrip circuits are directly used to match the impedance of the 5 mm GaN on SiC HEMTs to 50 Ω with using two-way power combiner. The internally matched circuit structure is optimized and calculated using ADS software, designed with this method of working from 8.5 to 9.5 GHz, and tested in the labs. We use microwave signal source, DC power supply, attenuator, power meter, and the spectrum analyzers to test the high power amplifier, with the bias condition of V_(ds) ＝ 30 V and V_(gs) ＝ -3.6 V, in the range of 8.5-9.5 GHz, the test results are as follows: power gain (G) ＞ 11 dB, the input VSWR ＜ 1.8 and the output VSWR ＜ 2.2, the output power (Pout) ＞ 36.65 dBm and power added efficiency (η_(PAE)) ＞ 30 %.