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Compact low pass filter with deep and wide stopband using H-shaped defected microstrip structure

机译:紧凑的低通滤波器,采用H形缺陷微带结构,具有深而宽的阻带

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摘要

A deep attenuation level and wide stopband bandwidth, sharp roll-off and low insertion loss in the passband using H-shaped defected microstrip structure (DMS) at open circuit stub resonator (OCSR) of the stepped-impedance low pass filter (SILPF) is presented in this paper. The proposed filter consists of H-shaped that is etching at the microstrip line of OCSR. The OCSR is embedded in the middle of high impedance line of the SILPF. The effect of the applying H-shaped DMS is investigated through parametric studies by comparing H-shaped with Y-shaped and U-shaped. It is observed that the comparison with conventional SILPF shows that the proposed modification filter exhibit a deep and large rejected band of 27 dB attenuation level from 8.21 GHz to 23.16 GHz up to 3 fc. The proposed filter also offers sharp roll-off at 7.31 GHz cut-off frequency and maximum ripple value in the range of DC to 6 GHz is less than 0.35 dB.
机译:在步进阻抗低通滤波器(SILPF)的开路短截线谐振器(OCSR)处使用H形缺陷微带结构(DMS)时,通带具有深衰减水平和宽阻带带宽,陡峭的滚降和低插入损耗。在本文中提出。所提出的滤波器由H形构成,该形状在OCSR的微带线处进行蚀刻。 OCSR嵌入在SILPF的高阻抗线的中间。通过比较H形,Y形和U形,通过参数研究来研究应用H形DMS的效果。可以发现,与常规SILPF的比较表明,所提出的改进型滤波器在8.21 GHz至23.16 GHz的频率范围内(最高3 fc)表现出较深且较大的抑制频带,其衰减水平为27 dB。所提出的滤波器还可以在7.31 GHz的截止频率处提供陡峭的滚降,并且DC至6 GHz范围内的最大纹波值小于0.35 dB。

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