Optimization and Analysis of near-infrared InGaAs detectors

摘要

Back-illuminated near-infrared detectors were designed and fabricated using p-InGaAs/p-InP/i-InGaAs/n-InP p-i-n layer structure. In order to optimize the detector layer structure, the device was simulated by drift-diffusion simulator "SimWindows" first, and then the epitaxy material was grown by metal organic chemical vapor deposition (MOCVD). The current-voltage characteristics of the fabricated detectors with and without light were investigated respectively. The results show that the responsivity of the detectors is around 0.7 AAV, and the dark current is about 1×10~(-4) A/cm~2 at reverse bias 0.1V, both of which are comparable to the simulated results. Our results also show the smaller detector has better dark current density, and the dominated mechanisms of dark current are discussed in the paper.