A high gain down-conversion mixer in 0.18um CMOS technology for ultra wideband applications

摘要

In this paper, a high gain as well as highly linear down-conversion mixer is presented for UWB applications. The proposed mixer circuit is implemented and simulated in a 0.18μm CMOS technology using Advanced Design System (ADS) software. The core of the proposed mixer is based on the Gilbert cell (double-balanced) mixer with source degeneration (inductive) at the RF driver stage and the inductors between the RF (or driver) stage and the LO (or switching) stage. An LC type impedance matching network is employed at the RF port to minimize reflections at RF port. The mixer circuit is designed for a RF frequency of 3.35 GHz, LO frequency of 3.60 GHz, and IF frequency of 250 MHz. The proposed mixer circuit achieves a conversion gain of 11.679 dB, an IIP3 of -1.536 dBm, 1dB compression point of -12.764 dBm and a single sideband noise figure of 5.460 dB while operating at a DC supply of 1.8V.