The focus of this investigation is on the formulation and a validation of reduced order models (ROMs) for the prediction of the response of structures with embedded piezoelectric actuators. The ROMs considered here are those constructed in a nonintrusive manner from a commercial finite element software, NASTRAN is adopted here. Notwithstanding the popularity of piezoelectric materials in structural dynamics related applications such as structural health monitoring and energy harvesting, not all commercial finite element software allow directly their modeling. In such cases, e.g., with NASTRAN, one can often proceed with an analogy and replace the electric actuation in the piezoelectric material by a fictitious thermal effect producing the same strain. This process recasts the determination of a ROM for a structure with embedded piezoelectric actuator into a similar ROM but for a heated structure, the framework of which has recently been developed. Yet, the temperature field resulting from the analogy would be quite different from the one considered in past efforts and would excite a broad array of structural modes. A full validation of ROM predictions in comparison to their dofmite element counterparts for a structure with embedded piezoelectic actuator is thus fully warranted. The test model considered for this effort is a built-up nano beam analyzed recently under harmonic variations of the piezoelectic voltage in open loop and an excellent match is obtained in comparison with these published results. Given this successful validation, the ROM formulation is finally completed by the derivation of the voltage induced in the piezoelectric component by the large deformations thereby permitting closed loop analyses. The excellent results obtained here demonstrate the applicability and accuracy of the ROM methodology for structures with piezoelectic layers in nonlinear geometric motions. They also provide further support of the broad generality of the nonintrusive nonlinear ROM methodology, including of the appropriateness of the "dual modes" basis functions, since the structural model analyzed here and its loading conditions are very different from those considered in past applications of nonintrusive ROMs.
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