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Investigation of eliminating free-wheeling diode conduction of Z-source inverter using SiC-MOSFET

机译:用SiC-MOSFET消除Z源逆变器的续流二极管导通的研究

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In this paper, the current paths in the circuit of Z-source inverter using SiC-MOSFET are studied. The Z-source inverter can boost the input voltage using short-through operation, and also invert the DC voltage to AC voltage. Short-through operation is able to eliminate the free-wheeling diodes. This leads to reduce the number of semiconductor devices used in motor drive system with boost function. In the free-wheeling operation, the current flows through the reverse conducting SiC-MOSFET, and never flows the body-diode of SiC-MOSFET. Therefore, the degradation of SiC-MOSFET due to body-diode bipolar action is not needed to take account. These phenomena are examined experimentally. And it is concluded that SiC-MOSFET is suitable for high-performance high-reliable and low-cost Z-source inverter.
机译:本文研究了采用SiC-MOSFET的Z源逆变器电路中的电流路径。 Z源逆变器可以使用短路操作来提高输入电压,也可以将DC电压转换为AC电压。短路操作能够消除续流二极管。这导致减少了具有升压功能的电动机驱动系统中使用的半导体器件的数量。在续流操作中,电流流过反向导通的SiC-MOSFET,而从未流过SiC-MOSFET的体二极管。因此,无需考虑由于体二极管双极作用而导致的SiC-MOSFET退化。对这些现象进行了实验检验。可以得出结论,SiC-MOSFET适用于高性能,高可靠性和低成本的Z源逆变器。

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