Spatially resolved lifetime spectroscopy from temperature-dependent photoluminescence imaging

摘要

Temperature-dependent lifetime spectroscopy is a well-established characterization technique used to determine the energy level of recombination centers (defects). The determination of the energy level is performed through analysis of measured lifetime over a range of temperatures at a fixed excess carrier concentration. In recent years, photoluminescence imaging has been extensively used for spatially resolved measurements of many electronic material and device parameters of silicon wafers and silicon solar cells. However, photoluminescence imaging at elevated temperatures has not been widely used. This study presents initial results of photoluminescence imaging measurements taken at high temperatures.