PREDICTING V_(OC) AT ULTRA-HIGH SOLAR CONCENTRATION USING COMPUTATIONAL NUMERICAL ANALYSIS

摘要

Under ultra-high solar concentration, drastic efficiency drops are attributed to a deteriorating fill factor and additional thermal effects. The effects of ultra-high solar concentration on other fundamental electrical properties, such as open-circuit voltage, have yet to be explored in detail. In this work, we discuss our theoretical examination of semiconductor performance under ultra-high irradiance. Using advanced numerical analysis techniques and the finite-element library deal.Ⅱ, we develop a computational model to simultaneously solve the carrier continuity equations and Poisson's equation for optically generated charge carriers and the resulting electric potential as functions of space and time. We use this model to analyze V_(OC) in both dynamic and quasi-steady state conditions. Ultimately, we characterize the relationship between V_(OC) and increasing solar concentration.