Understanding The Impact of Boron Diffusion on n-type Silicon Bifacial Solar Cells

摘要

In this work, we fabricated an n-type bifacial solar and spectral characterization have been investigated for this cell and a loss has been observed on the short wavelength. This paper mainly demonstrates increase cell efficiency by optimizing the p~+ emitter with a thermal grown SiO_2 as well as PECVD SiN_x passivation layer. P~+ emitter was formed by BBr_3 diffusion. Emitter sheet resistance have been optimized by modifying the BBr_3 diffusion temperature. Sheet resistance ranges from 49Ω/Sq to 173Ω/Sq, diffusion depth ranges from 0.4 um to 0.8 urn. By optimizing the front side emitter an improvement has been observed for short wavelength and increases the front side efficiency by 0.4%.