FEASIBILITY STUDY ON THE USE OF GEN5 PECVD REACTORS FOR MANUFACTURING OF HIGH-EFFICIENCY SILICON HETEROJUNCTION SOLAR CELLS

摘要

In this study we evaluate the potential of using Gen5 (1.4 m~2) KAI PECVD reactors, originally designed for production of thin film silicon modules, for manufacturing of high-efficiency silicon heterojunction (Si-HJ) solar cells. It is shown that Gen5 KAI PECVD reactors can provide an excellent uniformity of optical and electrical properties of hydrogenated amorphous silicon layers across entire surface of a 110×130 cm~2 wafer carrier. Surface passivation with low surface recombination velocity (＜ 4 cm/s) is achieved on n-type FZ c-Si wafers. Si-HJ solar cells, with an efficiency as high as 20.4%, are produced using commercial 6 inch n-type CZ c-Si wafers and Gen5 KAI PECVD reactors. The potential to reach the efficiency above 21% is also demonstrated.