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Electrophysical properties of Al/nanocrystalline CeOx/Si/Al structures

机译：Al /纳米晶CeO x / Si / Al结构的电物理性质

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Nanocrystalline CeO film in the Al/nc-CeO/Si-Al structures has been obtained using flash evaporation method and method of metallic Ce oxidation. The electrophysical properties of the Al/nc-CeO/Si/Al structures and the effect of technological factors on these properties have been investigated. It was revealed that the nanocrystalline CeO layer in the Al/nc-CeO/Si/Al structures is a semiconductor with an electronic conductivity and volume resistivity is within the range of 0.5-30 MΩ·cm. Based on the synthesized Al/nc-CeO/Si/Al structures the new types of heterojunction diodes with high interface quality have been developed. Interface state density of obtained structures is of about 7·10 cm·eV.

机译：采用闪蒸法和金属Ce氧化法获得了Al / nc-CeO / Si-Al结构的纳米晶CeO薄膜。研究了Al / nc-CeO / Si / Al结构的电物理性质以及工艺因素对这些性质的影响。揭示了Al / nc-CeO / Si / Al结构中的纳米晶CeO层是具有电子导电性的半导体，并且体积电阻率在0.5-30MΩ·cm的范围内。基于合成的Al / nc-CeO / Si / Al结构，开发了具有高界面质量的新型异质结二极管。所得结构的界面态密度为约7·10cm·eV。

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《》|2015年|148-150|共3页
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Maksimchuk N.V.; Korolevych L.N.; Borisov A.V.;
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Al/CeO; /Si/Al structure; electrophysical properties; heterojunction; nanocrystalline CeO;

机译：Al / CeO; / Si / Al结构;电物理性能;异质结;纳米晶CeO;

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Electrophysical properties of Al/nanocrystalline CeOx/Si/Al structures

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