Low-voltage electrostatically driven nanoelectromechanical-switches

摘要

Electrostatically-driven nanoelectromechanical (NEM) switches based on silicon and tungsten as a base material are designed and fabricated by reactive ion etching using Bosch process, and their switching performances are evaluated. The NEM switches consist of three isolated electrodes, i.e. gate, drain, and nanomechanical source. A low switching voltage of 0.8 V is achieved for the Si-based switch with a flexible mechanical structure and the narrow electrode gaps of electrostatic actuators. A method for high aspect ratio etching of W using Bosch process is developed and W-based NEM switches are also developed.