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Synthesis and characterization of indium doped tin oxide by using Flame spray pyrolysis

机译:火焰喷雾热解法合成铟掺杂氧化锡及其表征

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Synthesis of high performance p-type transparent conducting oxides has become important in the context of thin film transistors. Tin oxide is a promising material for p-type conductivity by various dopants like Li, Al, In and N. In this study, nanocrystalline indium doped tin oxide powders were synthesized by Flame spray pyrolysis (FSP) from inorganic precursors. Two batches of samples with systematically varying indium concentrations from 2 to 50 mole percent were prepared. X-ray diffraction was carried out to confirm the cassiterite structure of SnO. Above 30 mole percent In concentration, peaks corresponding to cubic InO were observed. The change in crystallite size with the dopant level was determined. HRSEM and HRTEM analysis of micrographs show the presence of elongated tin oxide nanoparticles ranging from 5 to 50 nm and show a high degree of crystallinity. The optical transmittance of the powders was measured using UV-Vis DRS and the optical band gap values were calculated using the Tauc realtion. XPS confirmed the presence of indium in the doped samples.
机译:在薄膜晶体管的背景下,高性能p型透明导电氧化物的合成已变得重要。氧化锡是通过Li,Al,In和N等各种掺杂剂实现p型导电性的有前途的材料。在这项研究中,通过火焰喷雾热解(FSP)从无机前驱体合成了纳米晶铟掺杂的氧化锡粉末。制备了两批铟浓度从2到50摩尔百分比系统变化的样品。进行X射线衍射以确认SnO的锡石结构。浓度超过30摩尔百分比时,观察到对应于立方InO的峰。确定了微晶尺寸随掺杂剂水平的变化。显微照片的HRSEM和HRTEM分析显示存在5至50 nm的细长的氧化锡纳米颗粒,并显示出高度的结晶度。使用UV-Vis DRS测量粉末的光学透射率,并使用Tauc Realtion计算光学带隙值。 XPS证实了掺杂样品中铟的存在。

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