Optoelectric properties of gate-tunable MoS2/WSe2 heterojunction

摘要

Two dimensional transition-metal dichalcogenides (TMDs) semiconductors are attractive materials for optoelectric devices because of their direct energy bandgap and transparency. To investigate the feasibility of transparent p-n junctions, we have fabricated heterojunctions consisting of WSe and MoS since WSe and MoS with proper electrode metals exhibit p-type and n-type behaviors, respectively. These heterojunctions showed rectifying behaviors, indicating that p-n junctions were formed. In addition, photocurrent and photovoltaic effects were observed under light illumination, which were dependent on the gate voltage. Possible origins of gate-tunability are discussed.