Investigation of carrier transport in nitride based LED by considering the random alloy fluctuation

摘要

The past researches show that the alloy fluctuation dominates the carrier percolation transport and light emission behavior in light emitting diodes (LEDs). To further understand the carrier behavior with alloy fluctuations, we have systematically investigated the carrier transport in the n-i-n InGaN quantum wells (QWs) and how the different electron blocking layer (EBL) affects the current-voltage curve and internal quantum efficiency (IQE).