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True-differential/common-mode mixed-mode S-parameter measurement techniques for cellular and 4G bandwidths

机译:适用于蜂窝和4G带宽的真差/共模混合模式S参数测量技术

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This paper introduces true-differential/common-mode mixed-mode S-parameter measurement techniques for cellular and 4G bandwidths. The on-chip differential amplifier is designed in a 130-nm RFCMOS process, where the simulated differential mode S-parameters are also presented over the wide frequencies (0.5 ~ 3.5 GHz) which includes cellular frequencies. The differential gains are 8.4 dB and 7.9 dB at 1 GHz and 3 GHz, respectively. The non-linear effects of the RF circuits can result in mixed-mode S-parameter measurement errors in virtual differential mode. Because real differential and common mode input signals stimulate a DUT in true differential mode, true differential/common mode measurements may reduce the measurement errors caused by the non-linear effects. Differential/common mixed-mode S-parameter tests were performed using an AD8350 IC from 0.1 GHz to 2.0 GHz. The various comparisons of measured input P1dB compression points and common mode rejection ratio (CMRRs) in true and virtual differential modes are presented.
机译:本文介绍了针对蜂窝和4G带宽的真差/共模混合模式S参数测量技术。片上差分放大器采用130nm RFCMOS工艺设计,在包括蜂窝频率在内的宽频率(0.5〜3.5 GHz)上也提供了模拟的差分模式S参数。 1 GHz和3 GHz时的差分增益分别为8.4 dB和7.9 dB。 RF电路的非线性效应会导致虚拟差分模式下的混合模式S参数测量误差。由于实际差分和共模输入信号会在真实差分模式下激励DUT,因此真实差分/共模测量可以减少由非线性效应引起的测量误差。使用0.1 GHz至2.0 GHz的AD8350 IC进行了差分/共模混合S参数测试。给出了在真差分模式和虚拟差分模式下测得的输入P1dB压缩点和共模抑制比(CMRR)的各种比较。

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