Effect of nozzle distance and fluid flow rate in jet spray wafer cleaning process

摘要

In this study, we successfully demonstrated the effect of nozzle distance for the wafer surface and carrier gas flow rate on pattern damage as well as PRE. For existing standard process parameters during wet cleaning process, by adjusting the nozzle distance to 45 mm from wafer surface and for carrier gas flow rate of 20 L/min we could achieve 78 % of PRE without pattern damage on the wafer surface. We believe that this study will be helpful for semiconductor manufacturing process to improve the production yield.