Pt Etching Method At Low Temperature Using Electrolyzed Sulfuric Acid Solution

摘要

New Pt etching methods using one-step processing of ESA and HC1 mixture, and two-step processing of ESA and HC1 mixture after HNO_3 and H_2O_2 mixture have been developed. One-step processing can treat Pt easily at lower temperature than in SPM. And Two-step processing can treat Pt at further lower temperature than one-step processing. Pt residue can be removed with this method, without damaging silicide and metal gate. ESA generators have been used for several years in commercial semiconductor manufacturing processes. Kurita is challenging to apply ESA for other wide usage with semiconductor manufactures.