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Comparison of 2D 3D models for simulations of electric-field in OVS

机译:在OVS中模拟电场的2D和3D模型比较

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In this paper, the basic principle of Optical Voltage Transformer (OVT) based on Pockels effect is introduced. A comparison is made between transverse Pockels effect and longitudinal Pockels effect. And OVT is unable to present the distribution of internal field directly. Therefore, it is necessary to simulate its electric filed, and the accuracy of the simulation results is important for OVT's design. For the axisymmetric model, in order to improve the efficiency of calculation a three-dimensional (3D) structure is usually simplified as a two-dimensional (2D) model. To compare and analyze the differences between the calculated results obtained by using OVT's voltage sensor head with 2D and 3D models, different shapes of BGO crystal in voltage sensor head are constructed respectively, and the finite element simulation software Ansoft Maxwell is used. The simulation results indicate that the maximum electric field intensity is quite different between 2D and 3D models of sensor head. And in the 3D simulation, different shapes of BGO crystal have different maximum electric field intensity of the sensor head. Compared with 2D simulation, 3D simulation is more real. So in an actual operation situation, it should analyze the OVT with 3D model.
机译:介绍了基于普克尔斯效应的光电压互感器(OVT)的基本原理。在横向普克尔效应和纵向普克尔效应之间进行比较。而且OVT无法直接显示内部场的分布。因此,有必要对其电场进行仿真,仿真结果的准确性对OVT的设计至关重要。对于轴对称模型,为了提高计算效率,通常将三维(3D)结构简化为二维(2D)模型。为了比较和分析使用OVT的2D和3D模型的电压传感器头获得的计算结果之间的差异,分别在电压传感器头中构造了不同形状的BGO晶体,并使用了有限元仿真软件Ansoft Maxwell。仿真结果表明,传感器头的2D模型和3D模型之间的最大电场强度存在很大差异。并且在3D模拟中,不同形状的BGO晶体具有不同的传感器头最大电场强度。与2D模拟相比,3D模拟更为真实。因此在实际运行情况下,应采用3D模型对OVT进行分析。

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