10 Mbps high-voltage digital transciever on single die for 50 V voltage swing

摘要

The proposed high-voltage (HV) digital transceiver comprises a pair of TX (transmitter) and RX (receiver) to exchange digital signals from different high-voltage domains. By taking advantage of the isolation capability of p-n junction provided by 800V 0.5 μm BCD CMOS process, a digital isolator is realized by a transformer which is able to be carried out with the TX and RX on the same die such that no off-chip bonding or discretes are needed. On-silicon measurements justify that the proposed HV digital transceiver demonstrates 10 Mbps data rate with 0.266 mJ/Mbps power dissiopation. This is by far the best performance for a single-die HV digital transceiver.