An improved voltage bandgap reference with high-order curvature compensation

摘要

This paper presents an improved bandgap reference (BGR) with high-order curvature compensation. By adding a second-level operational tranconductance amplifier (OTA) with feedback, fully improve the correctness of hypothesises in paper [3]. In addition, the output voltage reference can be further compensated than the conventional high-order BGR from theoretical analysis and simulation results. Through the comparison and analysis with conventional compensation BGR, the proposed bangap structure has a smaller temperature coefficient of output voltage reference. Finally the simulation results based on 0.1μm CMOS process with 1.5V supply voltage indicate that the temperature coefficient of the proposed reference is 25.5ppm/°C during the temperature range (-30°C~120°C) over different process corners.