Room Temperature Single Electron Transistor Design Based on Ordered Mesoporous Thin Film

摘要

Room temperature single electron transistor structure is designed based on the ordered mesoporous thin film. The tunneling structure of three-dimensional six-party coulomb island array is analyzed. The tunneling barried width belonging to tunneling path with the least number of coulomb islands is always equal to skeleton width of ordered mesoporous thin film, which provides accurate structure control for single electron transistor.