Super-junction power MOSFET in half bridge DC-DC zero-voltage converter for energy conversion management

摘要

The aim of this paper is to explore the switching capability of an improved high-voltage Super Junction MOSFET in half bridge resonant LLC converter. Due to suitable technological process, a considerable reduction in silicon conduction losses per area unit has been observed. Moreover, a reduction in the parasitic capacitance (i.e. gate charge) with an improved switching behavior has been obtained. In this paper, LLC resonant converter is selected because it operates at high switching frequency allowing to work with small size of the power transformer. The main benefit of this converter consists in zero-voltage switching (ZVS) of the MOSFETs. The converter is well suitable for applications such as PV systems. In this work the design procedure of LLC Resonant Converter is presented. Laboratory prototype was built to evaluate the performances of SJ MOSFET. Experimental results show an efficiency up to 94%.