首页> 外文会议>European Microwave Conference >An X-band low-power CMOS low noise amplifier with transformer inter-stage matching networks
【24h】

An X-band low-power CMOS low noise amplifier with transformer inter-stage matching networks

机译:具有变压器级间匹配网络的X波段低功耗CMOS低噪声放大器

获取原文

摘要

This paper presents a low-power low noise amplifier (LNA) using standard 0.18-µm CMOS technology for X-band satellite receiver applications. Two-stage common source configuration with transformer matching network is chosen to achieve low power, low noise, and compact size while maintaining reasonable gain performance. The measured small signal gain is 13.4 dB at 11 GHz with low power consumption of 4.8 mW from a 1 V supply voltage. The chip size is 0.44 mm. With noise match at the first stage, the measured noise figure (NF) of the LNA is 3.41 dB at 11 GHz. Compared to previously reported X-band LNA in 0.18-µm CMOS process, the presented LNA demonstrates the highest FOM.
机译:本文提出了一种用于X波段卫星接收器应用的,采用标准0.18 µm CMOS技术的低功耗低噪声放大器(LNA)。选择具有变压器匹配网络的两阶段共源配置,以实现低功耗,低噪声和紧凑的尺寸,同时保持合理的增益性能。在1 GHz电源电压下,测得的小信号增益在11 GHz时为13.4 dB,低功耗为4.8 mW。芯片尺寸为0.44毫米。在第一阶段进行噪声匹配时,在11 GHz时,LNA的测量噪声系数(NF)为3.41 dB。与先前报道的采用0.18 µm CMOS工艺的X波段LNA相比,本发明的LNA具有最高的FOM。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号