Pseudo p-i-n avalanche diode clamp

摘要

A new HV ESD protection avalanche diode design is proposed based on numerical analysis and experimentally validated. The device utilizes the double avalanche-injection conductivity modulation effect with additional diffusion ballasting region. It is demonstrated that the new solution provides lower on-state resistance normalized to area and lower capacitance compared to the conventional architecture of the integrated HV avalanche diodes.