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Low temperature approach for high density electrical feedthroughs for neural implants using maskless fabrication techniques

机译:使用掩模制造技术的神经植入物的高密度电馈通的低温方法

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Implantable electronic packages for neural implants utilize reliable electrical feedthroughs that connect the inside of a sealed capsule to the components that are exposed to the surrounding body tissue. With the ongoing miniaturization of implants requiring ever higher integration densities of such feedthroughs new technologies have to be investigated. The presented work investigates the sealing of vertical feedthroughs in aluminum-oxide-substrates with gold stud-bumps. The technology enables integration densities of up to 1600/cm~2 while delivering suitable water leak rates for realistic implantation durations of miniaturized packages (feedthrough-count > 50, package-volume < 2 cm~3) of more than 50 years. All manufacturing steps require temperatures below 420 °C and are suitable for maskless rapid prototyping.
机译:用于神经植入物的可植入电子封装利用可靠的电馈通,该电气馈通将密封胶囊的内部连接到暴露于周围的身体组织的部件。随着需要更高一体化的植入物的植入物的持续小型化必须调查新技术的新技术。本工作研究了用金螺栓凸块的氧化铝基材中的垂直馈通的密封。该技术能够集成高达1600 / cm〜2的密度,同时为大型化封装的实际植入持续时间提供适当的漏水速率(喂养 - 计数> 50,包装体积<2cm〜3)超过50年。所有制造步骤都需要低于420°C的温度,适用于无掩模快速原型设计。

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