As metrology extends towards the nanoscale a number of potential applications and new challenges arise. By combining photolithography with focussed ion beam and/or electron beam methods, SQUID devices with loop dimensions down to 200 nm and superconducting bridge dimensions of the order 80 nm have been produced. We describe a method for characterising the effective area and the magnetic penetration depth of such devices in the extreme limit where the superconducting penetration depth lambda is much greater than the film thickness and is comparable with the lateral dimensions of the device.
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