A GaN pulse width modulation integrated circuit

摘要

We report the first GaN-based pulse width modulation (PWM) circuit for integrated GaN gate driver. This circuit is composed of a sawtooth generator and a comparator, both of which exhibit stable operation at temperatures up to 250 °C and operate properly at 1 MHz. The PWM circuit is able to generate PWM signals whose duty cycle is effectively modulated over a wide range by a reference voltage. This successful demonstration suggests the possibility of an all-GaN solution for power converters by monolithically integrating GaN power switches with the peripheral gate drive circuits, leading to a compact solution with reduced parasitics and improved reliability.