1200V-Class HVIC technology with a divided high-side well structure for high-functionality and downsizing of circuits

摘要

A novel high-side well structure for a 1200V-class HVIC on a p-type substrate has been developed. The high-side well structure, consists of divided well regions with different voltage, makes it possible to integrate multiple circuits driven by different supply voltages on the high-side region in the HVIC. With implementing the developed structure, IGBT protection circuits on the high-side can be allocated 17% smaller area, and a 1200V-class HVICs with high functionality and high noise tolerance has been developed.