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GaN based transformer-less microinverter with coupled inductor interleaved boost and half bridge voltage swing inverter

机译:GaN基变压器 - 较少的微逆变器,具有耦合电感器交错升压和半桥电压摆幅逆变器

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Due to their plug and play feature, easy installation, and higher power yield under partial shading conditions, microinverters have gained popularity in the roof-top-PV market. This paper explores a converter system for the transfomer-less microinverter with coupled inductor based interleaved boost as the dc-dc stage and half bridge voltage swing (HBVS) inverter as the dc-ac stage. The dc-dc stage is capable of offering high gain with a flexible choice of turns ratio of the coupled inductor but simultaneously maintaining a reduced voltage stress on the main switch. The HBVS inverter has the advantages of reduced capacitor requirement for 120 Hz power decoupling and being half-bridge derived, minimized capacitive-coupled common-mode ground currents. A 300 W GaN based inverter prototype with 30 V nominal dc input and 120 V, 60 Hz nominal ac output and operating at switching frequency of 200/100 kHz has been developed to validate the converter's operation in hardware.
机译:由于它们的即插即用功能,易于安装,局部阴影条件下的更高的功率产量,微逆变器在屋顶PV市场上受欢迎。本文探讨了用于耦合电感的转换器系统的转换系统,基于耦合电感器作为DC-DC级和半桥电压摆动(HBV)逆变器作为DC-AC级。 DC-DC级能够提供高增益,具有耦合电感器的匝数比的灵活选择,而是同时保持主开关上的压力降低的压力。 HBV逆变器具有120 Hz功率去耦和半桥导出的电容器要求的优点,最小化电容耦合的共模接地电流。已经开发出300 W GaN基逆变器原型,具有30 V标称DC输入和120 v,60 Hz标称交流输出和200/100 kHz的开关频率操作,以验证转换器在硬件中的操作。

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