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Half-bridge in an inverter and method for reducing parasitic inductances in a half-bridge of an inverter

机译:逆变器中的半桥和减少逆变器半桥中寄生电感的方法

摘要

The invention, which relates to a half bridge (2) in an inverter (1) and a method for reducing parasitic inductances in a half bridge (2) of an inverter (1), is based on the object of specifying a half bridge or commutation cell which has a reduced parasitic inductance and is easy and inexpensive to manufacture. To solve this problem, the arrangement provides that a first connection wire (8) of the high-side circuit breaker (3) and a second connection wire (9) of the low-side circuit breaker (4) in a common hole in a circuit board (6 ) are arranged in an electrically conductive manner with conductor tracks (12) on the circuit board (6). To solve this problem, the method provides that a first connection wire (8) of the high-side circuit breaker (3) and a second connection wire (9) of the low-side circuit breaker (4) in a common hole in a circuit board (6 ) are provided electrically connected to conductor tracks (12) on the circuit board (6).
机译:本发明涉及逆变器(1)中的半桥(2)和用于减少逆变器(1)的半桥(2)中的寄生电感的方法,基于指定半桥或换向细胞具有降低的寄生电感,并且易于制造。为了解决这个问题,该装置提供了高侧断路器(3)的第一连接线(8)和在一个公共孔中的低侧断路器(4)的第二连接线(9)电路板(6)以导电方式布置在电路板上(6)上的导体轨道(12)。为了解决这个问题,该方法提供了高侧断路器(3)的第一连接线(8)和在一个公共孔中的低侧断路器(4)的第二连接线(9)电路板(6)设置在电路板(6)上电连接到导体轨道(12)。

著录项

  • 公开/公告号DE102020101288A1

    专利类型

  • 公开/公告日2021-07-22

    原文格式PDF

  • 申请/专利权人 HANON SYSTEMS;

    申请/专利号DE202010101288

  • 发明设计人 MAGNUS BÖH;PHILIPP KARUTZ;STEPHAN WERKER;

    申请日2020-01-21

  • 分类号H02M1;

  • 国家 DE

  • 入库时间 2022-08-24 20:08:43

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