Junction temperature estimation of SiC MOSFETs based on Extended Kalman Filtering

摘要

State of health monitoring, reliability improvement, and lifetime extension of power electronic systems necessitate accurate and real-time junction temperature estimation of semi-conductor devices. This paper presents a non-invasive real-time junction temperature estimation method for SiC MOSFETs. A state-space thermal model of the MOSFET is developed. Based on the developed model, a real-time junction temperature estimation method based on an Extended Kalman Filter (EKF) is proposed to measure the junction temperature of a SiC MOSFET. A boost converter is used to experimentally validate the accuracy of the developed model and effectiveness of the proposed junction temperature estimation method.