A power loss characterization method for semiconductor switching devices based on inverter-level DC measurements

摘要

This paper presents an inverter-level power loss measurement method for semiconductor switching devices in real inverter operation conditions. This method employs an H-bridge dc-dc convertor topology and a low-loss inductive load to improve the loss measurement accuracy. Since only dc measurement is involved, it is simpler and more accurate compared to traditional inverter-level loss measurement methods. Both switching and conduction loss can be estimated with this method. Experimental results on a traction-drive inverter show that, the difference between the estimated results with the proposed method and the results from traditional component-level methods is within 4% in the normal operation range of the inverter.