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Influence of DC Hollow Cathode H_2 and CH_4/H_2 Plasma Processing Conditions on the Hydrophobic Behavior of Carbon Fiber Paper used as Gas Diffusion Barrier Layer

机译:直流空心阴极H_2和CH_4 / H_2等离子处理条件对用作气体扩散阻挡层的碳纤维纸疏水性能的影响

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Significant improvement on the hydrophobicity of the Carbon Fiber Paper (CFP) Gas Diffusion Barrier Layer used in PEM Fuel Cell was achieved using DC Hollow Cathode Plasma Technique. Influence of the plasma processing conditions such as H_2 and CH_4 /H_2 gas mixture, gas flow rates, processing time, and discharge current were identified. To quantify the hydrophobicity, water contact angle (θ_w) measurements via sessile drop method were conducted. As-received untreated CFP and vacuum treated CFP formed no contact angle and both exhibited θ w =0. After H_2 plasma treatment at 50 sccm and 26 mA discharge, the CFP yield θ_w= 108.45°. At 50 sccm H_2 flow rate and varying CH_4 flow rate (5 sccm-20 sccm), measured θ_w values range from 107.71° to 137.25°. SEM images revealed etching of the CFP surface for the H_2 treated samples. Partial etching and deposition effects were observed upon addition of CH_4. This was attributed to the polymerization of hydrocarbon compounds accompanied by ion etching. AFM analysis revealed a significant difference between the surface rms roughness of the etched surfaces obtained with H_2 only and CH_4 /H_2 plasma. Using Micro-Raman Spectroscopy, intensity, position and FWHM of the D band peak at 1350 cm~(-1) and G band peak at 1585 cm~(-1) of the untreated CFP were compared against the plasma processed CFP substrates.
机译:使用直流空心阴极等离子技术,大大改善了用于PEM燃料电池的碳纤维纸(CFP)气体扩散阻隔层的疏水性。确定了等离子体处理条件(例如H_2和CH_4 / H_2气体混合物),气体流速,处理时间和放电电流的影响。为了量化疏水性,通过无滴法进行了水接触角(θ_w)的测量。所接收的未处理的CFP和真空处理的CFP没有形成接触角,并且都显示出θw = 0。在50 sccm和26 mA放电下进行H_2等离子体处理后,CFP的产量θ_w= 108.45°。在50 sccm H_2流量和变化的CH_4流量(5 sccm-20 sccm)下,测得的θ_w值范围为107.71°至137.25°。 SEM图像揭示了对H_2处理的样品的CFP表面的蚀刻。加入CH_4后观察到部分蚀刻和沉积效果。这归因于伴随离子蚀刻的烃化合物的聚合。 AFM分析显示,仅使用H_2和CH_4 / H_2等离子体获得的蚀刻表面的表面均方根粗糙度之间存在显着差异。使用显微拉曼光谱法,将未经处理的CFP的1350cm-1(-1)处的D谱带峰的强度,位置和FWHM与1585cm-1(-1)处的G谱带峰的强度,位置和FWHM与等离子体处理的CFP基质进行比较。

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