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High level modelling and performance evaluation of address mapping in NAND flash memory

机译:NAND闪存中地址映射的高级建模与性能评估

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Flash memory has several particularities compared to other types of memory. First, a write operation should be preceded by an erase operation. Second, erase operations can only be performed in a unit much larger than the write unit. Finally, each erasable unit has a limit number of possible erase operations. To address these problems, an intermediate software layer called Flash Translation Layer is used to perform address translation based on a mapping algorithm. The used mapping scheme is very important in deciding the performance and lifetime of flash memories. In this paper, we present a high level model for flash memory system allowing evaluating the impact of the address mapping algorithm on the performance of flash memory. We show the applicability of the performance estimation on one of the most popular and sophisticated address mapping scheme.
机译:与其他类型的内存相比,闪存具有多个特殊性。首先,应在擦除操作之前进行写入操作。其次,擦除操作只能在大于写入单元的单元中执行。最后,每个可擦除单元具有可能的擦除操作的极限。为了解决这些问题,使用称为闪光翻译层的中间软件层来基于映射算法执行地址转换。使用的映射方案在决定闪存的性能和寿命方面非常重要。在本文中,我们为闪存系统提供了一个高级模型,允许评估地址映射算法对闪存性能的影响。我们展示了性能估计对最流行和复杂的地址映射方案之一的适用性。

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