首页> 外文会议>IEEE European Test Symposium >Factoring variability in the Design/Technology Co Optimisation (DTCO) in advanced CMOS
【24h】

Factoring variability in the Design/Technology Co Optimisation (DTCO) in advanced CMOS

机译:高级CMOS中的设计/技术协同优化(DTCO)中的因素可变性

获取原文

摘要

This paper describes the fully automated GSS tool flow, which bridges the gap between Technology Computer Aided Design (TCAD) at the transistor level, and circuit simulations and verification. The purpose of the tool flow is twofold: (i) to allow rapid simulation-based Design-Technology Co-Optimisation (DTCO) and (ii) to allow generation of accurate compact models for Preliminary Design Kit (PDK) development at the early stages of new technology development. The aim is to capture accurately process, statistical and time dependent variability in the DTCO and early PDKs. The operation of the automated tool flow is exemplified in the comprehensive PDK compact model development for a 14 nm SOI FinFET process, and the corresponding transistor / SRAM cell co-optimisation.
机译:本文介绍了全自动GSS工具流程,该流程弥合了晶体管级的技术计算机辅助设计(TCAD)与电路仿真和验证之间的差距。工具流程的目的有两个:(i)允许基于快速仿真的设计技术协同优化(DTCO),以及(ii)允许在早期阶段生成用于初步设计套件(PDK)开发的精确紧凑模型。新技术开发。目的是准确捕获DTCO和早期PDK中的过程,统计和时间相关的可变性。在针对14 nm SOI FinFET工艺的全面PDK紧凑模型开发以及相应的晶体管/ SRAM单元共同优化中,示例了自动工具流程的操作。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号