X-band high-efficiency GaAs MMIC PA

摘要

This paper reports on the design and fabrication of a low cost, single stage, X-Band power amplifier for radar applications. A 0.1um GaAs technology from WIN Semiconductor was chosen and the PA was designed by using a reactively matched class AB approach. Here the PA was designed by engineering the load and source fundamental impedances for the highest PAE while short circuiting the second harmonic load termination. Measurement results performed at a frequency of 9 GHz show drain efficiency and PAE as high as 58.8% and 55.3% while delivering 0.55 W of maximum output power with a linear and power gain of 18.5 dB and 15 dB, respectively.