A 28-GHz Two-Stage Power Amplifier with a Shunt Built-in Linearizer Using 0.1-μm GaAs pHEMT Process

摘要

This paper presents a 28-GHz two-stage power amplifier (PA) with a shunt built-in linearizer using 0.1 μm pHEMT process. Factors affecting the gain expansion performance of the linearizer are investigated. By adjusting the size of the linearizer and the control voltage, the optimum parameters are selected for the linearizer. The 1-dB compression power (P_{out, 1dB}) reaches 22.2 dBm with power-added efficiency (PAE) of 28.1 %. Compared with a simply-designed two-stage PA, this work shows a decrease of 10.1 dB in 3^{rd-order intermodulation distortion (IMD3) at an output power level of 15 dBm under a two-tone test.}