An X-band CMOS power amplifier (PA) for high linearity and high efficiency application is presented in this paper. Neutralization technique is introduced to improve the stability and reverse-isolation performance of the PA. A push-pull topology is proposed for high linear performance. The proposed PA occupies only 0.2mm chip area under 180nm CMOS technology. Post simulation results show that the PA achieves 18.3dB gain at 12GHz with a 2GHz 3-dB bandwidth. The 1dB compressed output power (P1dB) is 18.9dBm with 21.4% power-added efficiency (PAE). The PA achieves a saturated output power (P) of 20.8dBm as well as a maximum PAE (PAEmax) of 35.0%.
展开▼
