Impacts of annealing processes on the electrical properties of gasb metal-oxide-semiconductor devices

摘要

In this paper, MOS capacitors and Mg-implanted source and drain p-channel GaSb MOSFETs are fabricated. The effects of post-metallization annealing (PMA) on the performance of these devices have been studied. The 30sec 300 °C PMA in N ambient is found to improve the quality of the AlO-GaSb interface. After PMA, for a device with a gate length of 2μm, a maximum drive current of 10.8 mA/mm, and an I/I ratio of 2×10 are achieved.