Technological Development in Pursuit of High-Performance Normally-off GaN-based HEMTs

摘要

A well-developed platform of normally-off p-GaN gate HEMT was reported in this article. The threshold voltage attained 2.4 V, and the off-state breakdown voltage attained over 600 V. The different types of field plate structure were also implemented and studied. The devices equipped with the dual field plates demonstrated better dynamic performance. Some preliminary developments of the recess-free normally-off AIGaN/GaN HEMTs using strain engineering were also demonstrated. The normally-off strained devices featured the optimized SiNx stressor and the comb-gate structure.